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STMicroelectronics unveils new SiC power technology for next-generation traction inverters
On September 24, STMicroelectronics (ST) presented its fourth generation STPOWER silicon carbide (SiC) MOSFET technology. It is particularly optimized for traction inverters. ST plans to introduce further advanced SiC technology innovations through 2027. ST’s Generation 4 SiC MOSFETs provide higher efficiency, smalle....
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