On May 19, Infineon Technologies AG announced that it will supply Rivian’s R2 platform with power modules for traction inverters. The R2 platform will use silicon carbide (SiC) and silicon (Si) modules from Infineon’s HybridPACK Drive G2 family. Supply is expected to start in 2026. Additionally, Infineon will supply

On May 14, the Union Cabinet of India approved the establishment of one more semiconductor unit under the India Semiconductor Mission. It is a joint venture of HCL and Foxconn. Together, they will set up a plant near Jewar airport in the Yamuna Expressway Industrial Development Authority or YEIDA.
This plant will man

On May 12, the Minister for Electronics & Information Technology inaugurated two new state-of-the-art design facilities of Renesas Electronics India Private Limited, located in Noida and Bengaluru. These are India’s first design centers to work on 3-nanometer chip design. 
The new Bengaluru office is Renesas’ largest

Denso Corporation (Denso) and Rohm Co., Ltd. (Rohm) announced that they have concluded a basic agreement to establish a strategic partnership in the semiconductor field. The two parties have been discussing and considering the matter since September 2024.
Both companies have strengthened their collaboration through t

On May 12, indie Semiconductor announced first quarter results for the period ended March 31, 2025. It reported that it has secured a design-win for its iND880 vision processor in an in-cabin monitoring application with Valeo for a North American OEM. Additionally, it was awarded an eMirror design-win for the iND880

On May 12, Infineon Technologies AG presented the CoolGaN bidirectional switch (BDS) 650 V G5, a gallium nitride (GaN) switch capable of actively blocking voltage and current in both directions. Featuring a common-drain design and a double-gate structure, it leverages Infineon's gate injection transistor (GIT) techno

Infineon Technologies AG and Visteon Corporation signed a memorandum of understanding (MoU) to advance the development of next-generation electric vehicle powertrains. They will collaborate and integrate power conversion devices based on Infineon semiconductors, with particular emphasis on wideband gap device technol

On May 8, Infineon Technologies AG announced that SGS-TÜV has certified Infineon’s industry-leading SEMPER NOR Flash memory to ASIL-D, the highest certification level for functional safety. Following a detailed analysis of product safety documentation under the ISO 26262:2018 standard, external experts have validated

NXP Semiconductors N.V. (NXP) has launched its third generation S32R47 imaging radar processors in 16 nm FinFET technology for L2+ to L4 autonomous driving.
Built on know-how and the proven technology of two previous generations, this new solution integrates a high-performance multi-core radar processing system, deli

On May 7, the Ministry of Business and Made in Italy and STMicroelectronics signed an agreement to support the growth and expansion of the STMicroelectronics site in Catania. 
The implementation of the program includes investments of EUR 5 billion in the period 2023-2037, with public incentives exceeding EUR 2 billio

On May 8, Infineon Technologies AG announced that it has received final approval for the funding of its new plant in Dresden (Smart Power Fab) from the German Federal Ministry for Economic Affairs. Infineon is expanding the site to meet customer demand, for example, for renewable energies, efficient data centers, and

On May 6, Infineon introduced a trench-based SiC superjunction (TSJ) technology concept to expand the technological capabilities of silicon carbide. The combination of trench and superjunction technology enables higher efficiency and more compact designs. Infineon will gradually expand its CoolSiC product portfolio,

On May 6, Nexperia introduced a range of highly efficient and robust automotive-qualified silicon carbide (SiC) MOSFETs with RDS(on) values of 30, 40, and 60 mΩ. These devices were previously offered in industrial grade and have now been awarded AEC-Q101 certification.
This makes them suitable for automotive applicat

On April 29, Nexperia announced that it is now offering a portfolio of 16 new low VF optimized planar Schottky diodes in CFP2-HP packaging. The portfolio includes eight industrials as well as eight AEC-Q101-qualified products. This release supports the growing trend for manufacturers to replace devices in SMA/B/C typ

On May 5, Infineon Technologies AG presented the new CoolSiC JFET product family. With robust short-circuit capability, thermal stability in linear mode, and precise overvoltage control, CoolSiC JFETs enable reliable and efficient system performance in a wide range of industrial and automotive applications, such as a

Announced on April 25, 2025, the Industrial Estate Authority of Thailand (IEAT) congratulated the collaboration between IEAT and Araya Land Development Co., Ltd. on the establishment of the Araya Industrial Estate in Samut Prakan Province.
This will be the 73rd industrial estate under IEAT's supervision, designed to

On April 29, Infineon Technologies AG launched its new CoolSiC MOSFET 750 V G2 technology, designed to deliver improved system efficiency and increased power density. It offers a granular portfolio with typical R DS(on) values up to 60 mΩ at 25°C, making it suitable for a wide range of applications, including on-boar