On April 22, ROHM and STMicroelectronics announced the expansion of the existing multi-year, long-term 150mm silicon carbide (SiC) substrate wafers supply agreement with SiCrystal, a ROHM group company. The new multi-year agreement governs the supply of larger volumes of SiC substrate wafers manufactured in Nuremberg, Germany, for a minimum expected value of USD 230 million.
STMicroelectronics stated that this agreement will support its device manufacturing capacity ramp-up for automotive and industrial customers worldwide. By facilitating more efficient energy generation, distribution, and storage, SiC supports the transition to cleaner mobility solutions, lower emissions industrial processes, and a greener energy future, as well as more reliable power supplies for resource-intensive infrastructure.