ater jacket guide Inverter semiconductor Sensor IC for inverter Reactor core for hybrid vehicle Insulated transformer for IGBT gate drive for traction inverter (integrating type) Smoothing film capacitor for HV/EV inverter 900V 800V LFC 3.5T 2.5L LEB H1 HR12DE EM57 1.5T 2.0T 1.5L 1.4T 1.8L ≤875V 1200V 400V 7DCT E-CVT 6DCT 6AT Nichicon Corporation BYD Wuxi InfiMotion Propulsion Technology Co., Ltd. Huayu Automotive Electric Drive System Co., L...

Who Supplies Whom  Updated at: 2025/04/24

silicon carbide (SiC) power devices to increase the powertrain efficiency of ZEEKR’s smart electric vehicles, resulting in improved performance, faster charging speeds and extended driving range. To support its expanding portfolio of high-performance EVs, ZEEKR will adopt onsemi EliteSiC MOSFET, 1200V, M3E with enhanced electrical and mechanical performance and reliability. “With cutting-edge technologies such as advanced SiC, ZEEKR will be ...

OEM Plants  Updated at: 2025/04/21

Infineon introduces new IGBT chips and RC-IGBT devices for electric vehicles On April 16, Infineon Technologies AG introduced EDT3 (Electric Drive Train, third generation) chips, designed for 400 V and 800 V systems, and the RC-IGBT chips, tailored specifically for 800 V systems. The new generation EDT3 achieves up to 20% lower total losses at high loads while maintaining efficiency at low loads. Electric vehicles using EDT3 chips achieve an exte...

News  Updated at: 2025/04/16

Developments in Automated and Bidirectional Charging Grid-friendly charging concepts Summary Introduction AUTOMATED CONDUCTIVE CHARGING INDUCTIVE CHARGING BIDIRECTIONAL CHARGING USE OF GALLIUM NITRIDE   This report contains a Spotlight article from Springer's automotive technical magazine "ATZ" www.atz-magazine.com. and "MTZ" www.mtz-magazine.com. Springer is a German company affiliated with MarkLines. About Springer Fachmedien Wiesbaden GmbH ...

Market & Tech Reports  Updated at: 2025/01/31

Forvia Hella chooses Infineon’s CoolSiC 1200 V MOSFET for 800 V DC-DC Charging Solution On January 29, Infineon Technologies AG announced that FORVIA HELLA has selected its new CoolSiC Automotive MOSFET 1200 V for the next-generation 800 V DC-DC charging solution. Designed for on-board chargers and DC-DC applications in 800 V automotive architectures, the CoolSiC MOSFET features a Q-DPAK package with top-side cooling (TSC) technology, ensuring...

News  Updated at: 2025/01/30

factor that is increasingly important under the new U.S. Administration’s increased focus on national security and investment in U.S. semiconductor production. Wolfspeed’s product categories include power modules, discrete components, and bare die products, all currently available in the 750V, 1200V and 2300V classes. (Wolfspeed press release on January 22, 2025)...

News  Updated at: 2025/01/23

pace of 46,500 square meters and conduct wafer processing for power semiconductors from November 2021. The company will invest approximately JPY 20 billion in total. (From a press release dated June 11, 2020) Mitsubishi Electric Corporation (Mitsubishi Electric) announced the launch of its N-series 1200V SiC MOSFET and will start sample shipment of six product types in July 2020. By utilizing this newly developed SiC MOSFET, which adopts junction...

Major Suppliers  Updated at: 2024/12/24

  NEXTSquare Inc., which handles power control equipment and inspection equipment, presented panels on inverter inspection equipment, V2H systems, and other products.   The inverter inspection system is capable of testing the output of BEV inverters with power supply voltages of 400V, 800V, and 1200V, and can handle a maximum of 500kW when operated in parallel.   It is said that this enables significant cost reductions compared to using a dy...

Market & Tech Reports  Updated at: 2024/10/10

Hella GmbH & Co. KGaA (FORVIA HELLA) Germany Bernard Schäferbarthold (CEO) -As part of the FORVIA Group, the Company develops and manufactures components and systems for automotive lighting and electronics. In addition, its joint ventures produce complete vehicle modules and air-conditioning systems.-The Company is organized into three business groups: Lighting: Focused on headlamps, combination rear lamps, body lighting and interior lighting s...

Major Suppliers  Updated at: 2024/10/01

innovations through 2027. ST’s Generation 4 SiC MOSFETs provide higher efficiency, smaller components, reduced weight, and extended driving range.  This latest generation of SiC devices will benefit future EV traction inverter platforms. ST’s new SiC MOSFET devices, made available in 750V and 1200V classes, will improve the energy efficiency and performance of both 400V and 800V EV bus traction inverters, bringing the advantages of SiC to m...

News  Updated at: 2024/09/25

ow, advanced R&D labs, and packaging processes.   Toshiba: Double-sided cooled power modules, ceramic substrates, ceramic balls   Toshiba Electronic Devices & Storage Corporation, which exhibited at the Toshiba Group booth, introduced power semiconductor Si double-sided heat dissipation modules (1200V/350A double-sided heat dissipation half bridge) for xEV traction inverters and recommended cooling units at the automotive semiconductor corner....

Market & Tech Reports  Updated at: 2024/08/27

Toyoda Gosei Co., Ltd. Japan Katsumi Saito (President, CEO) -A leader in the area of rubber and plastics polymer and LED products.  -Segments among the Automotive Parts Business: (Breakdown of revenues for FY ended March 2024) Interior and Exterior Parts:  34% Safety System Products: 38% Functional Parts: 17% Weatherstrips: 11% -Sales to the Toyota Group accounted for 65.9% of the Company's overall revenue (FY ended March 2024). -Listed on...

Major Suppliers  Updated at: 2024/07/22

thstand the challenging automotive environment; a key to unleashing the full capabilities and benefits of SiC MOSFETs. To attain optimal performance, the power module is paired with NXP’s GD3160 high-voltage, isolated gate driver which enables fast and reliable switching and fault protection. The 1200V RoadPak half-bridge SiC module is available now in 580A, 780A, and 980A options. (From a press release on March 21, 2022) NXP Semiconductors N.V...

Major Suppliers  Updated at: 2024/07/09

rt, Germany, specifically to serve its European clients. The new 1,300 sqm facility supports all aspects from initial prototyping through to small-scale production. It covers applications from small e-bikes to large electric trucks. The center can test low- and high-voltage packs up to a maximum of 1200V, 2000A, or 550kW. It also contains 2 climatic chambers that operate from 40°C to over 90°C for a full scope of aging, electrical, and thermal ...

Major Suppliers  Updated at: 2024/07/02

: Automotive traction inverters, system power supplies, airbags, other chips various inertial sensors, acceleration sensors, pressure sensors, and SiC power modules for traction inverters. The company's next-generation SiC power modules, the CSL (Compact SiC line) and LSL (Lead Frame SiC line), use 1200V, 9mΩ second-generation SiC to achieve higher power density and efficiency. Improved body diodes have been used to increase switching speed. The...

Major Suppliers  Updated at: 2024/06/26

Fraunhofer, Germany advances development of GaN Power ICs for EV charging On June 10, the Fraunhofer Institute for Applied Solid State Physics (IAF) announced that it is developing innovative transistors and integrated power circuits (GaN power ICs) for power electronics applications, using the power semiconductor gallium nitride (GaN). The institute is currently working on realizing GaN-based HEMT technologies with blocking voltages of up to and...

News  Updated at: 2024/06/17

Infineon provides broad range of products for Xiaomi’s SU7 EV On May 6, Infineon Technologies AG announced that it will provide silicon carbide (SiC) power modules HybridPACK Drive G2 CoolSiC and bare die products to Xiaomi EV for its recently announced SU7 until 2027.  Infineon’s CoolSiC-based power modules allow for higher operating temperatures, resulting in best-in-class performance, driving dynamics, and lifetime. Traction inverters bas...

News  Updated at: 2024/05/06

Infineon presents next generation of silicon carbide (SiC) MOSFET trench technology On March 5, Infineon Technologies AG presented the next generation of silicon carbide (SiC) MOSFET trench technology. The new Infineon CoolSiC MOSFET 650 V and 1200 V Generation 2 improve MOSFET key performance figures such as stored energies and charges by up to 20% compared to the previous generation. It leverages the performance capabilities of silicon carbide ...

News  Updated at: 2024/03/05

te driver boards, SiC power modules, etc.   The lineup includes two water-cooled models with a maximum power supply voltage (DC) of 700V and two models with a maximum DC voltage of 850V. The maximum motor current is 420A and the maximum output is up to 350kW.   The SIC inverter is equipped with a 1200V withstand voltage SIC-MOSFET intelligent power module that Cissoid SA (Belgium) has traditionally handled.   DC-DC converters, OBCs, and other ...

Market & Tech Reports  Updated at: 2024/02/29

CISSOID, Belgium presents new series of SiC inverter control modules in US On February 26, CISSOID presented a new series of SiC inverter control modules (ICMs) dedicated to the E-mobility market at the Applied Power Electronics Conference (APEC). The new CXT-ICM3SA series offers optimal hardware and software integration of CISSOID’s existing line of 3-phase 1200V/340A-550A SiC MOSFET Intelligent Power Modules (IPMs) with an OLEA T222 Field Pro...

News  Updated at: 2024/02/27