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Fraunhofer, Germany advances development of GaN Power ICs for EV charging
On June 10, the Fraunhofer Institute for Applied Solid State Physics (IAF) announced that it is developing innovative transistors and integrated power circuits (GaN power ICs) for power electronics applications, using the power semiconductor gallium nitride (GaN).
The institute is currently working on realizing GaN-b....
The institute is currently working on realizing GaN-b....
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