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Infineon presents next generation of silicon carbide (SiC) MOSFET trench technology

On March 5, Infineon Technologies AG presented the next generation of silicon carbide (SiC) MOSFET trench technology. The new Infineon CoolSiC MOSFET 650 V and 1200 V Generation 2 improve MOSFET key performance figures such as stored energies and charges by up to 20% compared to the previous generation.
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