The company's next-generation SiC power modules, the CSL (Compact SiC line) and LSL (Lead Frame SiC line), use 1200V, 9mΩ second-generation SiC to achieve higher power density and efficiency. Improved body diodes have been used to increase switching speed. The CSL and LSL use shell-sealed and plastic-sealed structures, respectively, to optimize the size according to the characteristics of the SiC chip and to increase the power density of the electric drive product. Supports screw connection and laser welding connection of power supply terminals to meet market needs for full bridges and half bridges.
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Infineon presents trench based SiC superjunction (TSJ) technology concept