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Infineon and ROHM sign MoU for silicon carbide (SiC) power semiconductors
On September 25, Infineon Technologies AG and ROHM Co., Ltd. signed a memorandum of understanding (MoU) to collaborate on packages for silicon carbide (SiC) power semiconductors. The partners aim to enable each other as second sources of selected packages for SiC power devices.
In the future, customers will be able t....
In the future, customers will be able t....
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