thstand the challenging automotive environment; a key to unleashing the full capabilities and benefits of SiC MOSFETs. To attain optimal performance, the power module is paired with NXP’s GD3160 high-voltage, isolated gate driver which enables fast and reliable switching and fault protection. The 1200V RoadPak half-bridge SiC module is available now in 580A, 780A, and 980A options. (From a press release on March 21, 2022) NXP Semiconductors N.V...

Major Suppliers  Updated at: 2025/07/04

AC/DC Inverter (Sourced by MUNRO & ASSOCIATES, USA) Parallel connected IGBTs Aluminium inverter case Inverter microcontroller Water jacket guide Inverter semiconductor Sensor IC for inverter Reactor core for hybrid vehicle 800V 2.5L 900V 3.5T LFC LEB H1 HR12DE EM57 1.5T 2.0T 1.5L 1.4T 1.8L ≤875V 1200V 400V 7DCT E-CVT 6DCT 6AT Shenzhen Megmeet Electric Co., Ltd. Shanghai Fengtian Electronic Co., Ltd. Valeo eAutomotive Germany GmbH (Formerly Va...

Who Supplies Whom  Updated at: 2025/07/02

ance in this case, making it possible to reduce the size of the inverter.   Mass production is scheduled to begin in 2027.   Toshiba can also provide IGBT and SiC power devices as bare dies, allowing users to create power modules of any shape by mounting bare chips.   On display were 750V IGBTs, 1200V RC-IGBTs and SiC, and the company said it was strengthening its offering of bare dies rather than 6-in-1 types, which are facing fierce cost com...

Market & Tech Reports  Updated at: 2025/06/26

: Automotive traction inverters, system power supplies, airbags, other chips various inertial sensors, acceleration sensors, pressure sensors, and SiC power modules for traction inverters. The company's next-generation SiC power modules, the CSL (Compact SiC line) and LSL (Lead Frame SiC line), use 1200V, 9mΩ second-generation SiC to achieve higher power density and efficiency. Improved body diodes have been used to increase switching speed. The...

Major Suppliers  Updated at: 2025/05/29

rt, Germany, specifically to serve its European clients. The new 1,300 sqm facility supports all aspects from initial prototyping through to small-scale production. It covers applications from small e-bikes to large electric trucks. The center can test low- and high-voltage packs up to a maximum of 1200V, 2000A, or 550kW. It also contains 2 climatic chambers that operate from 40°C to over 90°C for a full scope of aging, electrical, and thermal ...

Major Suppliers  Updated at: 2025/05/15

Hella GmbH & Co. KGaA (FORVIA HELLA) Germany Bernard Schäferbarthold (CEO) -As part of the FORVIA Group, the Company develops and manufactures components and systems for automotive lighting and electronics. In addition, it also produces complete vehicle modules.-The Company is organized into three business groups: Lighting: Focused on headlamps, combination rear lamps, body lighting and interior lighting systems. Electronics: Focused on automat...

Major Suppliers  Updated at: 2025/05/15

Infineon presents trench based SiC superjunction (TSJ) technology concept On May 6, Infineon introduced a trench-based SiC superjunction (TSJ) technology concept to expand the technological capabilities of silicon carbide. The combination of trench and superjunction technology enables higher efficiency and more compact designs. Infineon will gradually expand its CoolSiC product portfolio, leveraging SiC TSJ technology. This expansion will encompa...

News  Updated at: 2025/05/06

Nexperia, Netherlands launches 1200 V silicon carbide MOSFETs in D2PAK-7 packaging On May 6, Nexperia introduced a range of highly efficient and robust automotive-qualified silicon carbide (SiC) MOSFETs with RDS(on) values of 30, 40, and 60 mΩ. These devices were previously offered in industrial grade and have now been awarded AEC-Q101 certification. This makes them suitable for automotive applications like onboard chargers (OBC) and traction in...

News  Updated at: 2025/05/06

Infineon introduces CoolSiC JFET technology for solid-state power distribution On May 5, Infineon Technologies AG presented the new CoolSiC JFET product family. With robust short-circuit capability, thermal stability in linear mode, and precise overvoltage control, CoolSiC JFETs enable reliable and efficient system performance in a wide range of industrial and automotive applications, such as automotive battery disconnect switches. The first gene...

News  Updated at: 2025/05/05

silicon carbide (SiC) power devices to increase the powertrain efficiency of ZEEKR’s smart electric vehicles, resulting in improved performance, faster charging speeds and extended driving range. To support its expanding portfolio of high-performance EVs, ZEEKR will adopt onsemi EliteSiC MOSFET, 1200V, M3E with enhanced electrical and mechanical performance and reliability. “With cutting-edge technologies such as advanced SiC, ZEEKR will be ...

OEM Plants  Updated at: 2025/04/21

Infineon introduces new IGBT chips and RC-IGBT devices for electric vehicles On April 16, Infineon Technologies AG introduced EDT3 (Electric Drive Train, third generation) chips, designed for 400 V and 800 V systems, and the RC-IGBT chips, tailored specifically for 800 V systems. The new generation EDT3 achieves up to 20% lower total losses at high loads while maintaining efficiency at low loads. Electric vehicles using EDT3 chips achieve an exte...

News  Updated at: 2025/04/16

Developments in Automated and Bidirectional Charging Grid-friendly charging concepts Summary Introduction AUTOMATED CONDUCTIVE CHARGING INDUCTIVE CHARGING BIDIRECTIONAL CHARGING USE OF GALLIUM NITRIDE   This report contains a Spotlight article from Springer's automotive technical magazine "ATZ" www.atz-magazine.com. and "MTZ" www.mtz-magazine.com. Springer is a German company affiliated with MarkLines. About Springer Fachmedien Wiesbaden GmbH ...

Market & Tech Reports  Updated at: 2025/01/31

Forvia Hella chooses Infineon’s CoolSiC 1200 V MOSFET for 800 V DC-DC Charging Solution On January 29, Infineon Technologies AG announced that FORVIA HELLA has selected its new CoolSiC Automotive MOSFET 1200 V for the next-generation 800 V DC-DC charging solution. Designed for on-board chargers and DC-DC applications in 800 V automotive architectures, the CoolSiC MOSFET features a Q-DPAK package with top-side cooling (TSC) technology, ensuring...

News  Updated at: 2025/01/30

factor that is increasingly important under the new U.S. Administration’s increased focus on national security and investment in U.S. semiconductor production. Wolfspeed’s product categories include power modules, discrete components, and bare die products, all currently available in the 750V, 1200V and 2300V classes. (Wolfspeed press release on January 22, 2025)...

News  Updated at: 2025/01/23

pace of 46,500 square meters and conduct wafer processing for power semiconductors from November 2021. The company will invest approximately JPY 20 billion in total. (From a press release dated June 11, 2020) Mitsubishi Electric Corporation (Mitsubishi Electric) announced the launch of its N-series 1200V SiC MOSFET and will start sample shipment of six product types in July 2020. By utilizing this newly developed SiC MOSFET, which adopts junction...

Major Suppliers  Updated at: 2024/12/24

  NEXTSquare Inc., which handles power control equipment and inspection equipment, presented panels on inverter inspection equipment, V2H systems, and other products.   The inverter inspection system is capable of testing the output of BEV inverters with power supply voltages of 400V, 800V, and 1200V, and can handle a maximum of 500kW when operated in parallel.   It is said that this enables significant cost reductions compared to using a dy...

Market & Tech Reports  Updated at: 2024/10/10

innovations through 2027. ST’s Generation 4 SiC MOSFETs provide higher efficiency, smaller components, reduced weight, and extended driving range.  This latest generation of SiC devices will benefit future EV traction inverter platforms. ST’s new SiC MOSFET devices, made available in 750V and 1200V classes, will improve the energy efficiency and performance of both 400V and 800V EV bus traction inverters, bringing the advantages of SiC to m...

News  Updated at: 2024/09/25

ow, advanced R&D labs, and packaging processes.   Toshiba: Double-sided cooled power modules, ceramic substrates, ceramic balls   Toshiba Electronic Devices & Storage Corporation, which exhibited at the Toshiba Group booth, introduced power semiconductor Si double-sided heat dissipation modules (1200V/350A double-sided heat dissipation half bridge) for xEV traction inverters and recommended cooling units at the automotive semiconductor corner....

Market & Tech Reports  Updated at: 2024/08/27

Toyoda Gosei Co., Ltd. Japan Katsumi Saito (President, CEO) -A leader in the area of rubber and plastics polymer and LED products.  -Segments among the Automotive Parts Business: (Breakdown of revenues for FY ended March 2024) Interior and Exterior Parts:  34% Safety System Products: 38% Functional Parts: 17% Weatherstrips: 11% -Sales to the Toyota Group accounted for 65.9% of the Company's overall revenue (FY ended March 2024). -Listed on...

Major Suppliers  Updated at: 2024/07/22

Fraunhofer, Germany advances development of GaN Power ICs for EV charging On June 10, the Fraunhofer Institute for Applied Solid State Physics (IAF) announced that it is developing innovative transistors and integrated power circuits (GaN power ICs) for power electronics applications, using the power semiconductor gallium nitride (GaN). The institute is currently working on realizing GaN-based HEMT technologies with blocking voltages of up to and...

News  Updated at: 2024/06/17