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Silicon carbide (SiC) discrete devices
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TUNDRA 1200V SiC Power Module/ TUNDRA Power Core
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ATICA 1200V SiC Power Module (Next Gen. from TUNDRA)/ Cutomized DC Link Capacitor 950V/ 350μF
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SiC power module for traction inverters
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Wolfspeed launches 1200V silicon carbide power modules for E-mobility propulsion systems
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Infineon presents trench based SiC superjunction (TSJ) technology concept
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Forvia Hella chooses Infineon’s CoolSiC 1200 V MOSFET for 800 V DC-DC Charging Solution
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Fraunhofer, Germany advances development of GaN Power ICs for EV charging
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Infineon provides broad range of products for Xiaomi’s SU7 EV
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Infineon presents next generation of silicon carbide (SiC) MOSFET trench technology
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Zeekr Automobile (Ningbo Hangzhou Bay New Zone) Co., Ltd. (formerly Ningbo Zeekr Intelligent Technology Co., Ltd.[China]
silicon carbide (SiC) power devices to increase the powertrain efficiency of ZEEKR’s smart electric vehicles, resulting in improved performance, faster charging speeds and extended driving range. To support its expanding portfolio of high-performance EVs, ZEEKR will adopt onsemi EliteSiC MOSFET, 1200V, M3E with enhanced electrical and mechanical performance and reliability. “With cutting-edge technologies such as advanced SiC, ZEEKR will be ...
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