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Silicon carbide (SiC) discrete devices
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TUNDRA 1200V SiC Power Module/ TUNDRA Power Core
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ATICA 1200V SiC Power Module (Next Gen. from TUNDRA)/ Cutomized DC Link Capacitor 950V/ 350μF
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SiC power module for traction inverters
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Wolfspeed launches 1200V silicon carbide power modules for E-mobility propulsion systems
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Infineon presents trench based SiC superjunction (TSJ) technology concept
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Forvia Hella chooses Infineon’s CoolSiC 1200 V MOSFET for 800 V DC-DC Charging Solution
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Fraunhofer, Germany advances development of GaN Power ICs for EV charging
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Infineon provides broad range of products for Xiaomi’s SU7 EV
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Infineon presents next generation of silicon carbide (SiC) MOSFET trench technology
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Shindengen's Power MOSFETsSHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
Shindengen's Power MOSFETs ”Maximizing energy conversion efficiency for the benefit of humanity and society." Since our founding in 1949, Shindengen Electric Manufacturing Company’s business has centered on power electronics, which has been represented in our power semiconductors, switching power supplies, and car electronics devices. Over the years, we have developed countless products that meet the expectations and trust of our customers w...
Find Suppliers Updated at: 2026/03/17
Shindengen's SiC DevicesSHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
gen, we leverage cutting-edge SiC technology to develop high-performance, highly reliable products that meet our customers’ needs. ■ SiC Schottky Barrier Diodes (SiC-SBD) We are expanding our lineup of SiC Schottky Barrier Diodes (SiC-SBD) with compact surface-mount packages, offering 650V and 1200V options.SiC-SBDs feature ultra-fast recovery characteristics (reduced trr), high voltage resistance, and high-temperature operation, enabling si...
Find Suppliers Updated at: 2026/03/17
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