Infineon presents trench based SiC superjunction (TSJ) technology concept On May 6, Infineon introduced a trench-based SiC superjunction (TSJ) technology concept to expand the technological capabilities of silicon carbide. The combination of trench and superjunction technology enables higher efficiency and more compact designs. Infineon will gradually expand its CoolSiC product portfolio, leveraging SiC TSJ technology. This expansion will encompa...

News  Updated at: 2025/05/06

Nexperia, Netherlands launches 1200 V silicon carbide MOSFETs in D2PAK-7 packaging On May 6, Nexperia introduced a range of highly efficient and robust automotive-qualified silicon carbide (SiC) MOSFETs with RDS(on) values of 30, 40, and 60 mΩ. These devices were previously offered in industrial grade and have now been awarded AEC-Q101 certification. This makes them suitable for automotive applications like onboard chargers (OBC) and traction in...

News  Updated at: 2025/05/06

Infineon introduces CoolSiC JFET technology for solid-state power distribution On May 5, Infineon Technologies AG presented the new CoolSiC JFET product family. With robust short-circuit capability, thermal stability in linear mode, and precise overvoltage control, CoolSiC JFETs enable reliable and efficient system performance in a wide range of industrial and automotive applications, such as automotive battery disconnect switches. The first gene...

News  Updated at: 2025/05/05

Infineon introduces new IGBT chips and RC-IGBT devices for electric vehicles On April 16, Infineon Technologies AG introduced EDT3 (Electric Drive Train, third generation) chips, designed for 400 V and 800 V systems, and the RC-IGBT chips, tailored specifically for 800 V systems. The new generation EDT3 achieves up to 20% lower total losses at high loads while maintaining efficiency at low loads. Electric vehicles using EDT3 chips achieve an exte...

News  Updated at: 2025/04/16

Forvia Hella chooses Infineon’s CoolSiC 1200 V MOSFET for 800 V DC-DC Charging Solution On January 29, Infineon Technologies AG announced that FORVIA HELLA has selected its new CoolSiC Automotive MOSFET 1200 V for the next-generation 800 V DC-DC charging solution. Designed for on-board chargers and DC-DC applications in 800 V automotive architectures, the CoolSiC MOSFET features a Q-DPAK package with top-side cooling (TSC) technology, ensuring...

News  Updated at: 2025/01/30

factor that is increasingly important under the new U.S. Administration’s increased focus on national security and investment in U.S. semiconductor production. Wolfspeed’s product categories include power modules, discrete components, and bare die products, all currently available in the 750V, 1200V and 2300V classes. (Wolfspeed press release on January 22, 2025)...

News  Updated at: 2025/01/23

innovations through 2027. ST’s Generation 4 SiC MOSFETs provide higher efficiency, smaller components, reduced weight, and extended driving range.  This latest generation of SiC devices will benefit future EV traction inverter platforms. ST’s new SiC MOSFET devices, made available in 750V and 1200V classes, will improve the energy efficiency and performance of both 400V and 800V EV bus traction inverters, bringing the advantages of SiC to m...

News  Updated at: 2024/09/25

Fraunhofer, Germany advances development of GaN Power ICs for EV charging On June 10, the Fraunhofer Institute for Applied Solid State Physics (IAF) announced that it is developing innovative transistors and integrated power circuits (GaN power ICs) for power electronics applications, using the power semiconductor gallium nitride (GaN). The institute is currently working on realizing GaN-based HEMT technologies with blocking voltages of up to and...

News  Updated at: 2024/06/17

Infineon provides broad range of products for Xiaomi’s SU7 EV On May 6, Infineon Technologies AG announced that it will provide silicon carbide (SiC) power modules HybridPACK Drive G2 CoolSiC and bare die products to Xiaomi EV for its recently announced SU7 until 2027.  Infineon’s CoolSiC-based power modules allow for higher operating temperatures, resulting in best-in-class performance, driving dynamics, and lifetime. Traction inverters bas...

News  Updated at: 2024/05/06

Infineon presents next generation of silicon carbide (SiC) MOSFET trench technology On March 5, Infineon Technologies AG presented the next generation of silicon carbide (SiC) MOSFET trench technology. The new Infineon CoolSiC MOSFET 650 V and 1200 V Generation 2 improve MOSFET key performance figures such as stored energies and charges by up to 20% compared to the previous generation. It leverages the performance capabilities of silicon carbide ...

News  Updated at: 2024/03/05

CISSOID, Belgium presents new series of SiC inverter control modules in US On February 26, CISSOID presented a new series of SiC inverter control modules (ICMs) dedicated to the E-mobility market at the Applied Power Electronics Conference (APEC). The new CXT-ICM3SA series offers optimal hardware and software integration of CISSOID’s existing line of 3-phase 1200V/340A-550A SiC MOSFET Intelligent Power Modules (IPMs) with an OLEA T222 Field Pro...

News  Updated at: 2024/02/27

pany, eInfochips, announced that they are working with Infineon Technologies AG to help eInfochips’ customers accelerate the development of electric vehicle (EV) chargers. Arrow’s High Power Center of Excellence has developed a 30kW DC fast charger reference platform. This includes Infineon’s 1200V CoolSiC Easy power modules and also hardware design, embedded firmware, bi-directional charging support, and energy metering functionality.  Ba...

News  Updated at: 2024/02/27

ON Semiconductor renews long-term supply agreement with Li Auto ON Semiconductor Corp. (ON Semiconductor) announced that it has renewed its long-term supply agreement with China-based Li Auto. Li Auto will adopt ON Semiconductor’s EliteSiC 1200V bare die for its next-generation 800V electric vehicle (EV) and expand the use of ON Semiconductor’s integrated high-performance 8-megapixel (MP) image sensor model to its future models. Li Auto has a...

News  Updated at: 2024/01/22

market segments. ST’s SiC technology is widely used in onboard chargers and power modules. STMicroelectronics’s SiC devices increase performance and efficiency through higher switching frequencies, breakdown voltages, and thermal resistance. Li Auto is adopting ST’s advanced third-generation 1200V SiC MOSFET in the traction inverter of its upcoming 800V BEV platform.  Based on STMicroelectronics press release ...

News  Updated at: 2023/12/26

Nexperia, Netherlands announces first silicon carbide (SiC) MOSFETs On November 30, Nexperia announced its first silicon carbide (SiC) MOSFETs with the release of two 1200 V discrete devices in 3-pin TO-247 packaging with RDS(on) values of 40 mΩ and 80 mΩ. Nexperia is also planning the future release of automotive-grade MOSFETs. This release addresses the market demand for the increased availability of high-performance SiC MOSFETs in industrial...

News  Updated at: 2023/11/30

rt, Germany, specifically to serve its European clients. The new 1,300 sqm facility supports all aspects from initial prototyping through to small-scale production. It covers applications from small e-bikes to large electric trucks. The center can test low- and high-voltage packs up to a maximum of 1200V, 2000A, or 550kW. It also contains 2 climatic chambers that operate from 40°C to over 90°C for a full scope of aging, electrical, and thermal ...

News  Updated at: 2023/11/03

rs, fluid pumps, and air conditioning, they deliver advantages including high power density, very compact design, and simplified assembly. The product family enhances flexibility for system designers by presenting a choice of four-pack, six-pack, and totem-pole configurations.  The modules contain 1200V SiC power switches that leverage SiC MOSFET technology ensuring low RDS(on) values. Leveraging ST’s proven, robust ACEPACK technology, the mod...

News  Updated at: 2023/10/26

Infineon and Infypower, China partner for new energy vehicle charger market On September 20,  Infineon Technologies AG announced a collaboration with Infypower, a Chinese market leader in new energy vehicle charging, to provide INFY with the 1200 V CoolSiC MOSFET power semiconductor devices to improve the efficiency of electric vehicle charging stations. By integrating 1200 V CoolSiC MOSFETs, Infypower’s 30 kW DC charging module offers a wide...

News  Updated at: 2023/09/21

eLeapPower announces wireless EV charging systems in Canada for commercial EVs On September 6, eLeapPower, a Canadian growth-stage startup with innovative electric powertrain and charging solutions for EVs, announced new technologies for the North American medium-duty electric commercial truck market that reduce complexity, cost, and weight and provides new methods of wireless charging.   •   eLeapPower's patented integrated inverter soluti...

News  Updated at: 2023/09/12

Fraunhofer IAF, Germany researching bidirectional charging under GaN4EmoBiL project On August 1, Fraunhofer IAF announced that it is leading a consortium to research innovative charging technologies in the recently launched project GaN4EmoBiL (GaN power semiconductors for electromobility and system integration through bidirectional charging). Bidirectional charging allows electric cars to be charged with electricity from renewable sources and dis...

News  Updated at: 2023/08/11