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Nexperia to invest USD 200 million in Hamburg, Germany for SiC and GaN semiconductors
On June 27, Nexperia announced plans to invest USD 200 million to develop the next generation of wide bandgap semiconductors (WBG) such as silicon carbide (SiC) and gallium nitride (GaN), and to establish production infrastructure at the Hamburg site. Wafer fab capacity for silicon (Si) diodes and transistors will al....
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