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Infineon presents next generation of silicon carbide (SiC) MOSFET trench technology
- Infineon
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On March 5, Infineon Technologies AG presented the next generation of silicon carbide (SiC) MOSFET trench technology. The new Infineon CoolSiC MOSFET 650 V and 1200 V Generation 2 improve MOSFET key performance figures such as stored energies and charges by up to 20% compared to the previous generation.
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