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Infineon introduces new CoolSiC MOSFETs 2000 V with increased power density

On March 12, Infineon Technologies AG introduced the new CoolSiC MOSFETs 2000 V to meet designers' demand for increased power density. It is the first discrete silicon carbide device with a breakdown voltage of 2,000 V and comes in a TO-247PLUS-4-HCC package with a creepage distance of 14 mm and a clearance distance ....

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