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Nexperia launches GaN FET solutions
On November 19, Nexperia announced its entry into the gallium nitride (GaN) FET market with the introduction of the 650 volt GAN063-650WSA, a very robust device with a gate-source voltage (VGS) of +/- 20 V and a temperature range of -55 to +175 °C. The GAN063-650WSA features a low RDS(on) - down to 60 mΩ - and fast s....
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