for an USD 85,000 voucher and the Mack LR Electric refuse vehicle is approved for a USD 120,000 voucher through HVIP.  Produced at Mack’s Roanoke Valley Operations (RVO), the Mack MD Electric can be configured as a Class 6 model or the Class 7 model, both exempt from the 12% Federal Excise Tax (FET). The Mack MD Electric features a three-phase Permanent Magnet Synchronous 260 hp motor powered by Nickel Manganese Cobalt (NMC) Oxide lithium-ion...

News  Updated at: 2024/05/23

European Commission sends Statement of Objections to companies in automotive starter battery cartel case On November 30, the European Commission informed automotive starter battery manufacturers Banner, Clarios, Exide, FET, and Rombat as well as trade association Eurobat and its service provider Kellen of its preliminary view that they have breached EU antitrust rules by colluding to increase the prices of automotive starter batteries sold to car...

News  Updated at: 2023/12/01

o increase the flexibility of installation. Nichicon has also developed an automatic open-close device to automatically start the power supply from an EV or PHEV in the event of power outages. The company has newly adopted a silicon carbide metal-oxide-semiconductor field-effect transistor (SiC MOS FET) to optimize the inverter circuit and reduce energy loss during charging and discharging. (From an article in the Nikkan Jidosha Shimbun on Octobe...

News  Updated at: 2023/10/19

refrigeration loop). This enables a longer range for EVs. The LIN-based MLX81334 is a 1A-rated motor driver intended for deployment in mechatronic thermal management systems. This single-chip device efficiently drives small DC, BLDC, or stepper motors. Each IC has an embedded microcontroller, four FET half-bridge drivers, data conversion circuitry, plus LIN or serial interfaces. The 64 KB on-chip memory provides ample capacity for the use of sop...

News  Updated at: 2023/07/03

VisIC, Israel presents GaN based 3-phase traction inverter with PMSM motor On February 15, VisIC Technologies Ltd. tested its 2.2mΩ 650V half-bridge power module, consisting of 4 parallel 8mΩ Power FET, in a 3-phase configuration on a dyno-test-bench using a PMSM motor at a major automotive OEM. VisIC Technologies has proven that their D3GaN (Direct Drive D-Mode Gallium-Nitride) semiconductor technology is well-suited even for the most challeng...

News  Updated at: 2023/02/16

Nexperia announces 650 V Gallium Nitride (GaN) Technology On June 10, Nexperia announced a new range of GaN FET devices featuring next-gen high-voltage GaN HEMT H2 technology in both TO-247 and the company’s proprietary CCPAK surface mount packaging. It employs through-epi vias, reducing defects and shrinking die size by around 24%. RDS(ON) is also reduced to just 41 mΩ (max., 35 mΩ typ. at 25 °C) with the initial release in traditional TO-...

News  Updated at: 2020/06/15

Nexperia launches GaN FET solutions   On November 19, Nexperia announced its entry into the gallium nitride (GaN) FET market with the introduction of the 650 volt GAN063-650WSA, a very robust device with a gate-source voltage (VGS) of +/- 20 V and a temperature range of -55 to +175 °C. The GAN063-650WSA features a low RDS(on) - down to 60 mΩ - and fast switching to offer very high efficiency. Nexperia is targeting high performance application...

News  Updated at: 2019/11/20

MHI's second-tier subsidiary starts production and development of engines, turbochargers Mitsubishi Heavy Industries Forklift & Engine Turbocharger Holdings, Ltd. (M-FET), a subsidiary of Mitsubishi Heavy Industries, Ltd. (MHI), announced that Mitsubishi Heavy Industries Engine & Turbocharger, Ltd. (MHIET), a M-FET group company, started development and production of engines and turbochargers on July 1. MHIET will be led by President and CEO Yosh...

News  Updated at: 2016/07/05