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Infineon presents silicon carbide diode with breakdown voltage of 2000 V
On October 23, Infineon Technologies AG presented the CoolSiC Schottky diode 2000 V G5, the first discrete silicon carbide diode on the market with a breakdown voltage of 2000 V. It is suitable for applications with DC link voltages up to 1500 VDC and offers current ratings from 10 to 80 A. This makes it ideal for hi....
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