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Nexperia, Netherlands announces first silicon carbide (SiC) MOSFETs
On November 30, Nexperia announced its first silicon carbide (SiC) MOSFETs with the release of two 1200 V discrete devices in 3-pin TO-247 packaging with RDS(on) values of 40 mΩ and 80 mΩ. Nexperia is also planning the future release of automotive-grade MOSFETs.
This release addresses the market demand for the increa....
This release addresses the market demand for the increa....
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