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Resonac develops and begins production of third generation SiC epitaxial wafers for power semiconductors
Resonac Corporation (Resonac) announced that it has developed and launched production of 3rd generation high-grade silicon carbide (SiC) epitaxial wafers (HGE-3G) for power semiconductors. SiC epi-wafer is produced through deposition and growth of an epitaxial SiC layer on the surface of single crystal SiC substrate,....
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