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Renesas develops fin-shaped MONOS flash memory cells for ADAS

Renesas Electronics Corporation announced its successful development of the world's first split-gate metal-oxide nitride oxide silicon (SG-MONOS) flash memory cells employing transistors with fin-shape for use in microcontrollers (MCUs) with on-chip flash memory having a circuit linewidth of 16 to 14 nanometer (nm) o....

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