Renesas develops fin-shaped MONOS flash memory cells for ADAS  [ Japan ]

Renesas Electronics Corporation announced its successful development of the world's first split-gate metal-oxide nitride oxide silicon (SG-MONOS) flash memory cells employing transistors with fin-shape for use in microcontrollers (MCUs) with on-chip flash memory having a circuit linewidth of 16 to 14 nanometer (nm) or finer. Renesas currently mass produces 40nm MCUs using this technology, and 2...