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IQE, UK and X-FAB, Germany sign joint development agreement for GaN Power
On April 10, IQE plc, and X-FAB Silicon Foundries SE, announced a Joint Development Agreement (JDA) to create a European-based GaN Power device platform solution. With an initial two-year scope of work, IQE and X-FAB will collaborate to develop a 650V GaN device.
The agreement will leverage IQE’s GaN epitaxy design ....
The agreement will leverage IQE’s GaN epitaxy design ....
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