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Nexperia announces 650 V Gallium Nitride (GaN) Technology
On June 10, Nexperia announced a new range of GaN FET devices featuring next-gen high-voltage GaN HEMT H2 technology in both TO-247 and the company’s proprietary CCPAK surface mount packaging.
It employs through-epi vias, reducing defects and shrinking die size by around 24%. RDS(ON) is also reduced to just 41 mΩ (m....
It employs through-epi vias, reducing defects and shrinking die size by around 24%. RDS(ON) is also reduced to just 41 mΩ (m....
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